The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Oct. 06, 2008
Yasutaka Sakata, Kanagawa, JP;
Yasutaka Sakata, Kanagawa, JP;
Renesas Electronic Corporation, Kanagawa, JP;
Abstract
The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in cases where the semiconductor laser is energized continuously under conditions of high temperature and high optical output. An optical semiconductor laser has an optical waveguide structure comprising an n-type cladding layer, an active layer and p-type cladding layers, and a current narrowing/blocking structure comprising a p-type blocking layer and an n-type blocking layer, wherein concentration of hydrogen contained in the p-type cladding layers is higher than concentration of hydrogen contained in the p-type blocking layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile