The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2011

Filed:

Jul. 31, 2006
Applicants:

Ralph H. Johnson, Murphy, TX (US);

James R. Biard, Richardson, TX (US);

James K. Guenter, Garland, TX (US);

Inventors:

Ralph H. Johnson, Murphy, TX (US);

James R. Biard, Richardson, TX (US);

James K. Guenter, Garland, TX (US);

Assignee:

Finisar Corporation, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
Abstract

Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.


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