The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Feb. 21, 2006
Topside thermal management of semiconductor devices using boron phosphide contacting a gate terminal
Kevin L. Robinson, Clay, NY (US);
Kevin L. Robinson, Clay, NY (US);
Lockheed Martin, Bethesda, MD (US);
Abstract
A semiconductor device including at least one gate terminal in operational contact with an active layer or top surface of the semiconductor substrate includes a deposited layer of boron phosphide covering the gate terminal and at least a portion of the active layer or the top surface next to and extending from the gate terminal. According to an aspect, the layer of boron phosphide is deposited by a chemical vapor deposition (CVD) process. The boron phosphide layer will have a thickness less than or equal to about 10 microns. The boron phosphide provides a heat spreading coating across the die surface, thus increasing the surface area that conducts the heat from the die. Since the boron phosphide coating is in intimate contact with the gate terminal(s) and the immediately adjacent passivation surfaces of the device, generated heat can rapidly spread away from the active junction or channel. The additional thermal path(s) provided by the boron phosphide coating may terminate away from the active region to further conduct away the heat through thermally unused areas of the device.