The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Jan. 05, 2010
Kensaku Motoki, Itami, JP;
Masaki Ueno, Itami, JP;
Kensaku Motoki, Itami, JP;
Masaki Ueno, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
The present invention is a nitride semiconductor device including an n-type gallium nitride single crystal substrate, an epitaxially grown nitride film on the substrate, and electrodes deposited on a top and a bottom of the substrate. In order to produce the substrate, oxygen is doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride bulk crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride bulk crystal, and eliminating the seed crystal from the bulk crystal.