The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Jan. 10, 2008
Young-su Chung, Suwon-si, KR;
Hyung-suk Jung, Suwon-si, KR;
Sung Heo, Busan, KR;
Hion-suck Baik, Cheonan-si, KR;
Young-su Chung, Suwon-si, KR;
Hyung-suk Jung, Suwon-si, KR;
Sung Heo, Busan, KR;
Hion-suck Baik, Cheonan-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments provide a complementary metal-oxide semiconductor (CMOS) semiconductor device and a method of fabricating the CMOS semiconductor device. The CMOS semiconductor device may include gates in the nMOS and pMOS areas, polycrystalline silicon (poly-Si) capping layers, metal nitride layers underneath the poly-Si capping layers, and a gate insulating layer underneath the gate. The metal nitride layers of the nMOS and pMOS areas may be formed of the same type of material and may have different work functions. Since a metal gate is formed of identical types of metal nitride layers, a process may be simplified, yield may be increased, and a higher-performance CMOS semiconductor device may be obtained.