The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Mar. 01, 2006
Brahmanandam Tanikella, Northboro, MA (US);
Elizabeth Thomas, Southington, OH (US);
Frank L. Csillag, Hopkinton, MA (US);
Palaniappan Chinnakaruppan, Springboro, OH (US);
Jadwiga Jaroniec, Stow, OH (US);
Eric Virey, Portland, OR (US);
Robert A. Rizzuto, Worcester, MA (US);
Brahmanandam Tanikella, Northboro, MA (US);
Elizabeth Thomas, Southington, OH (US);
Frank L. Csillag, Hopkinton, MA (US);
Palaniappan Chinnakaruppan, Springboro, OH (US);
Jadwiga Jaroniec, Stow, OH (US);
Eric Virey, Portland, OR (US);
Robert A. Rizzuto, Worcester, MA (US);
Saint-Gobain Ceramics & Plastics, Inc., Worcester, MA (US);
Abstract
Wafer suitable for semiconductor deposition application can be fabricated to have low bow, warp, total thickness variation, taper, and total indicated reading properties. The wafers can be fabricated by cutting a boule to produce rough-cut wafers, lapping the rough-cut wafers, etching the lapped wafers to remove a defect, deformation zone and relieve residual stress, and chemically mechanically polishing the etched wafers to desired finish properties. Etching can be performed by immersion in a heated etching solution comprising sulfuric acid or a mixture of sulfuric and phosphoric acids. A low pH slurry utilized in chemical mechanical polishing of the spinel wafer can comprise α-AlOand an organic phosphate.