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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7919811 B1

PDFFull Text
Date of Patent:
Apr. 05, 2011

Filed:

May. 16, 2008

Semiconductor device and method for manufacturing same

Applicants:

Miwako Akiyama, Tokyo, JP;

Yusuke Kawaguchi, Kanagawa-ken, JP;

Yoshihiro Yamaguchi, Saitama-ken, JP;

Inventors:

Miwako Akiyama, Tokyo, JP;

Yusuke Kawaguchi, Kanagawa-ken, JP;

Yoshihiro Yamaguchi, Saitama-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Thien F Tran

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a second-conductivity-type base region provided on a first-conductivity-type semiconductor layer, a first-conductivity-type source region provided on the second-conductivity-type base region, a gate insulating film covering an inner wall of a trench which passes through the second-conductivity-type base region and reaching the first-conductivity-type semiconductor layer, a gate electrode buried in the trench via the gate insulating film, and a second-conductivity-type region being adjacent to the second-conductivity-type base region below the first-conductivity-type source region, spaced from the gate insulating film, and having a higher impurity concentration than the second-conductivity-type base region. c≧d is satisfied, where d is a depth from an upper surface of the first-conductivity-type source region to a lower end of the gate electrode, and c is a depth from an upper surface of the first-conductivity-type source region to a lower surface of the second-conductivity-type base region.

Find Patent Forward Citations

Akiyama, Miwako. (2011). Semiconductor device and method for manufacturing same (U.S. Patent No. 7919811). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7919811

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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