The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2011

Filed:

Aug. 11, 2009
Applicants:

Zhongshan Hong, Shanghai, CN;

Xue LI, Shanghai, CN;

Inventors:

Zhongshan Hong, Shanghai, CN;

Xue Li, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

System and method for self-aligned etching. According to an embodiment, the present invention provides a method for performing self-aligned source etching process. The method includes a step for providing a substrate material. The method also includes a step for forming a layer of etchable oxide material overlying at least a portion of the substrate material. The layer of etchable oxide material can characterized by a first thickness. The layer of etchable oxide material includes a first portion, a second portion, and a third portion. The second portion is positioned between the first portion and the third portion. The method additionally includes a step for forming a plurality of structures overlying the layer of etchable oxide material. The plurality of structures includes a first structure and a second structure.


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Hong, Zhongshan. (2011). Device with polymer layers and two-step self-aligned source etch with large process window (U.S. Patent No. 7919810). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7919810

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