The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Oct. 29, 2007
Takayuki Watanabe, Yamanashi, JP;
Tsutomu Michitsuta, Yamanashi, JP;
Taro Hasegawa, Yamanashi, JP;
Takuya Fujii, Yamanashi, JP;
Takayuki Watanabe, Yamanashi, JP;
Tsutomu Michitsuta, Yamanashi, JP;
Taro Hasegawa, Yamanashi, JP;
Takuya Fujii, Yamanashi, JP;
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Abstract
A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.