The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Jun. 30, 2008
Jin-ku Lee, Ichon-shi, KR;
Jae-geun OH, Ichon-shi, KR;
Sun-hwan Hwang, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for doping polysilicon improves a doping profile during plasma doping and includes forming a silicon layer using two separate operations. After forming a first silicon layer, thermal annealing is performed to crystallize the first silicon layer, such that the uniformity of a doping concentration according to the depth of a layer inside is improved during plasma doping. Additionally, a doping concentration at the interface between a polysilicon layer and a gate oxide layer is increased. A by-product deposition layer is reduced, which is formed on the surface of a polysilicon layer due to the increase of a doping concentration in a polysilicon layer. As a result, the dopant loss, which is caused by the removing and cleansing of an ion implantation barrier used during doping, is reduced.