The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2011

Filed:

Jun. 16, 2008
Applicants:

Ki Hong Lee, Suwon-si, KR;

Seung Ho Pyi, Yongin-si, KR;

Ki Seon Park, Yongin-si, KR;

Inventors:

Ki Hong Lee, Suwon-si, KR;

Seung Ho Pyi, Yongin-si, KR;

Ki Seon Park, Yongin-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a non-volatile memory device with a charge trapping layer wherein a tunneling layer, a charge trapping layer, a blocking layer, and a control gate electrode are formed on a semiconductor substrate. A temperature of the control gate electrode is increased by applying a magnetic field to the control gate electrode. The blocking layer is densified by allowing the increased temperature to be transferred to the blocking layer contacting the control gate electrode.


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