The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Oct. 09, 2009
Takahisa Jitsuno, Osaka, JP;
Keiu Tokumura, Osaka, JP;
Ryotaro Togashi, Kanagawa, JP;
Toshio Inami, Kanagawa, JP;
Hideaki Kusama, Kanagawa, JP;
Tatsumi Goto, Kanagawa, JP;
Takahisa Jitsuno, Osaka, JP;
Keiu Tokumura, Osaka, JP;
Ryotaro Togashi, Kanagawa, JP;
Toshio Inami, Kanagawa, JP;
Hideaki Kusama, Kanagawa, JP;
Tatsumi Goto, Kanagawa, JP;
Osaka University, Osaka, JP;
The Japan Steel Works, Ltd., Tokyo, JP;
Abstract
A laser crystallization method in which an amorphous silicon thin filmformed on a substrateis irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin filmwith an absorbent to form an absorbent layeron the desired specific local areas of the amorphous silicon thin filmand laser annealing for crystallizing the specific local areas of the amorphous silicon thin filmby irradiating the amorphous silicon thin filmincluding the specific local areas with a semiconductor laser beam L having a specific wavelength absorbable by the absorbent layerand unabsorbable by the amorphous silicon thin filmfor heating the absorbent layer