The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Jan. 12, 2009
Wagdi W. Abadeer, Jerico, VT (US);
Anthony R Bonaccio, Shelburne, VT (US);
Jack a Mandelman, Flat Rock, NC (US);
William R. Tonti, Essex Junction, VT (US);
Sebastian T Ventrone, South Burlington, VT (US);
Wagdi W. Abadeer, Jerico, VT (US);
Anthony R Bonaccio, Shelburne, VT (US);
Jack A Mandelman, Flat Rock, NC (US);
William R. Tonti, Essex Junction, VT (US);
Sebastian T Ventrone, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a first aspect, a first apparatus is provided. The first apparatus is a memory element that includes (1) one or more MOSFETs each including a dielectric material having a dielectric constant of about 3.9 to about 25; and (2) control logic coupled to at least one of the one or more MOSFETs. The control logic is adapted to (a) cause the memory element to operate in a first mode to store data; and (b) cause the memory element to operate in a second mode to change a threshold voltage of at least one of the one or more MOSFETs from an original threshold voltage to a changed threshold voltage such that the changed threshold voltage affects data stored by the memory element when operated in the first mode. Numerous other aspects are provided.