The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Feb. 09, 2009
Jui-lung Chen, Hsinchu, TW;
Wei-shung Chen, Hsinchu County, TW;
Yi-hsun Chung, Miaoli County, TW;
Chia-chiuan Chang, Miaoli County, TW;
Jui-Lung Chen, Hsinchu, TW;
Wei-Shung Chen, Hsinchu County, TW;
Yi-Hsun Chung, Miaoli County, TW;
Chia-Chiuan Chang, Miaoli County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A burn-in method for SRAMs and chips. For a memory cell of the SRAM, the SRAM burn-in method controls the control signals of the memory cell to generate current paths to pass through the memory cell, the corresponding bit-line and the corresponding bit-line-bar. The contacts/vias in the current paths are tested by providing burn-in currents to flow through the current paths, so that mismatched contacts/vias are burned by the burn-in currents. SRAMs that fail the burn-in test are abandoned after the burn-in procedure.