The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2011

Filed:

Jun. 06, 2008
Applicants:

Sébastien Cremer, Sassenage, FR;

Philippe Delpech, Meylan, FR;

Sylvie Bruyere, Le Champ Pres Froges, FR;

Inventors:

Sébastien Cremer, Sassenage, FR;

Philippe Delpech, Meylan, FR;

Sylvie Bruyere, Le Champ Pres Froges, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

The method for forming the microelectronic device having at least one two or three dimensional capacitor includes creating, on a substrate, a plurality of components and a number of superimposed metal interconnection levels. An insulating layer is formed above a metal interconnection level, and a horizontal metal zone of a next metal interconnection level in which one or more of the insulating blocks created from this insulating layer are incorporated is formed therein. The zone is designed to form a lower structural part of the capacitor.


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