The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Aug. 03, 2007
Masahiko Ishizone, Niigata-ken, JP;
Naoya Hasegawa, Niiata-ken, JP;
Masamichi Saito, Niigata-ken, JP;
Yosuke Ide, Niigata-ken, JP;
Ryo Nakabayashi, Niigata-ken, JP;
Kazumasa Nishimura, Niigata-ken, JP;
Masahiko Ishizone, Niigata-ken, JP;
Naoya Hasegawa, Niiata-ken, JP;
Masamichi Saito, Niigata-ken, JP;
Yosuke Ide, Niigata-ken, JP;
Ryo Nakabayashi, Niigata-ken, JP;
Kazumasa Nishimura, Niigata-ken, JP;
TDK Corporation, Tokyo, JP;
Abstract
A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR/R) at low RA than known tunneling magnetic sensors.