The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Mar. 24, 2006
Shunji Saruki, Tokyo, JP;
Kenji Inage, Tokyo, JP;
Tetsuya Kuwashima, Tokyo, JP;
Hiroshi Kiyono, Tokyo, JP;
Katsumichi Tagami, Tokyo, JP;
Kazumasa Fukuda, Tokyo, JP;
Masahide Kohno, Tokyo, JP;
Shunji Saruki, Tokyo, JP;
Kenji Inage, Tokyo, JP;
Tetsuya Kuwashima, Tokyo, JP;
Hiroshi Kiyono, Tokyo, JP;
Katsumichi Tagami, Tokyo, JP;
Kazumasa Fukuda, Tokyo, JP;
Masahide Kohno, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0<(n−n)·(μ−μ)·(nμ)<0.2, where nand nare densities of tunnel electrons when an element resistance is a minimum and maximum respectively during reading signals and μis the mobility of electrons when not trapped.