The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2011

Filed:

Dec. 23, 2008
Applicants:

Woo Sup Shin, Gyeonggi-do, KR;

Joo Soo Lim, Gyeongsangbuk-do, KR;

Heung Lyul Cho, Gyeonggi-do, KR;

Hee Young Kwack, Seoul, KR;

Inventors:

Woo Sup Shin, Gyeonggi-do, KR;

Joo Soo Lim, Gyeongsangbuk-do, KR;

Heung Lyul Cho, Gyeonggi-do, KR;

Hee Young Kwack, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); G02F 1/1368 (2006.01); G02F 1/1343 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A liquid crystal display device includes a gate line on a substrate; a data line crossing the gate line with a gate insulating film interposed between the gate line and the data line to define a pixel region; a thin film transistor at the crossing of the gate line and the data line; a pixel electrode connected to the thin film transistor; a common electrode forming a horizontal electric field with the pixel electrode in the pixel region; a gate pad connected to the gate line; and a data pad connected to the data line, wherein the gate pad and the data pad includes a lower pad in the same layer as the gate line and made of the same material as the gate line, a lower contact hole through the gate insulating film to expose the lower pad, an upper pad in the same layer as the data line, made of the same material as the data line, and connected to the lower pad through the lower contact hole, and an upper contact hole through a passivation film protecting the thin film transistor to expose the upper pad, and a semiconductor layer of the thin film transistor overlaps with the gate electrode of the thin film transistor, and has a width smaller than that of a gate electrode of the thin film transistor.


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