The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2011

Filed:

Jul. 07, 2005
Applicants:

Godefridus Adrianus Maria Hurkx, Eindhoven, NL;

Prabhat Agarwal, Leuven, BE;

Abraham Rudolf Balkenende, Eindhoven, NL;

Petrus Hubertus Cornelis Magnee, Nijmegen, NL;

Melanie Maria Hubertina Wagemans, Eindhoven, NL;

Erik Petrus Antonius Maria Bakkers, Eindhoven, NL;

Erwin Hijzen, Leuven, BE;

Inventors:
Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a semiconductor device () with a semiconductor body () comprising a bipolar transistor with an emitter region, a base region and a collector region () of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type, and the first conductivity type. One of the emitter or collector regions () comprises a nanowire (). The base region () has been formed from a layer () at the surface of the semiconductor body (); the other one () of the emitter or collector regions () has been formed in the semiconductor body () below the base region (). The emitter or collector region () comprising the nanowire () has been provided on the surface of the semiconductor body () such that its longitudinal axis extends perpendicularly to the surface.


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