The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2011

Filed:

Jan. 31, 2007
Applicants:

Subramanya Mayya Kolake, Suwon-si, KR;

In-seok Yeo, Seoul, KR;

Kyong-hee Joo, Seongnam-si, KR;

Inventors:

Subramanya Mayya Kolake, Suwon-si, KR;

In-Seok Yeo, Seoul, KR;

Kyong-Hee Joo, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device includes an insulating layer formed over a substrate, a gate formed over the insulating layer, and charge storage elements disposed over the insulating layer. The charge storage elements are separated from each other and are electrically insulated, and each of the charge storage elements is capable of storing at least one charge. The charge storage elements can include fullerenes.


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