The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Aug. 18, 2009
Applicants:
Masaya Hosaka, Fukushima-ken, JP;
Masatomi Okanishi, Fukushima-ken, JP;
Inventors:
Masaya Hosaka, Fukushima-ken, JP;
Masatomi Okanishi, Fukushima-ken, JP;
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides semiconductor device and a fabrication method therefor. The semiconductor device includes trenches () formed in a semiconductor substrate (), first ONO films () provided on both side surfaces of the trenches, and first word lines () provided on side surfaces of the first ONO films () and running in a length direction of the trenches (). According to the present invention, it is possible to provide a semiconductor device and a fabrication method therefor, in which higher memory capacity can be achieved.