The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Dec. 09, 2008
Natsuki Otani, Kanagawa, JP;
Tsutomu Tanaka, Kanagawa, JP;
Masafumi Kunii, Kanagawa, JP;
Masanobu Ikeda, Kanagawa, JP;
Ryoichi Ito, Kanagawa, JP;
Natsuki Otani, Kanagawa, JP;
Tsutomu Tanaka, Kanagawa, JP;
Masafumi Kunii, Kanagawa, JP;
Masanobu Ikeda, Kanagawa, JP;
Ryoichi Ito, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.