The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7915636 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 29, 2011

Filed:

Aug. 21, 2008
Applicant:

Chang Myung Lee, Gyeonggi-do, KR;

Inventor:

Chang Myung Lee, Gyeonggi-do, KR;

Assignee:

Epivalley Co., Ltd., Gumi, Gyungbuk, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.


Find Patent Forward Citations

Lee, Chang. (2011). Iii-nitride semiconductor light emitting device (U.S. Patent No. 7915636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7915636

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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