The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Sep. 11, 2008
Sachio Karino, Miyagi, JP;
Eiji Takase, Miyagi, JP;
Makoto Oogane, Kanagawa, JP;
Tsuyoshi Nagatake, Kanagawa, JP;
Michiru Kamada, Miyagi, JP;
Hironobu Narui, Kanagawa, JP;
Nobukata Okano, Kanagawa, JP;
Sachio Karino, Miyagi, JP;
Eiji Takase, Miyagi, JP;
Makoto Oogane, Kanagawa, JP;
Tsuyoshi Nagatake, Kanagawa, JP;
Michiru Kamada, Miyagi, JP;
Hironobu Narui, Kanagawa, JP;
Nobukata Okano, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.