The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Jul. 03, 2006
Tsuneo Ogura, Kanagawa-ken, JP;
Ichiro Omura, Kanagawa-ken, JP;
Tsuneo Ogura, Kanagawa-ken, JP;
Ichiro Omura, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device comprises: a first semiconductor layer of silicon carbide of a first conductivity type; a second semiconductor layer of silicon carbide of a second conductivity type selectively provided on the first semiconductor layer; a main electrode layer of silicon carbide of the first conductivity type selectively provided on the second semiconductor layer; a gate insulating film provided on the second semiconductor layer; a gate electrode formed on the gate insulating film; and a third semiconductor layer of the first conductivity type intervening a current path which is formed between the main electrode layer and the first semiconductor layer when an ON voltage is applied to the gate electrode. The third semiconductor layer is selectively provided on the first semiconductor layer and is adjacent to the second semiconductor layer. A doping density of the third semiconductor layer is higher than a doping density of the first semiconductor layer.