The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7915612 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 29, 2011

Filed:

Jan. 07, 2008
Applicants:

Yoshiyuki Nasuno, Kashihara, JP;

Yasuaki Ishikawa, Fujiidera, JP;

Takanori Nakano, Kashiba, JP;

Inventors:

Yoshiyuki Nasuno, Kashihara, JP;

Yasuaki Ishikawa, Fujiidera, JP;

Takanori Nakano, Kashiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/061 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×10to 2.0×10cm.


Find Patent Forward Citations

Nasuno, Yoshiyuki. (2011). Photoelectric conversion device and method of producing the same (U.S. Patent No. 7915612). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7915612

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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