The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Feb. 24, 2009
Kenji Aoyama, Yokohama, JP;
Eiji Ito, Yokohama, JP;
Masahiro Kiyotoshi, Yokkaichi, JP;
Tadashi Iguchi, Yokohama, JP;
Moto Yabuki, Tokyo, JP;
Kenji Aoyama, Yokohama, JP;
Eiji Ito, Yokohama, JP;
Masahiro Kiyotoshi, Yokkaichi, JP;
Tadashi Iguchi, Yokohama, JP;
Moto Yabuki, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity.