The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Jan. 04, 2010
Peter Moens, Zottegem, BE;
Marnix Tack, Merelbeke, BE;
Sylvie Boonen, Laarne, BE;
Paul Colson, Lotenhulle-Aalter, BE;
Peter Moens, Zottegem, BE;
Marnix Tack, Merelbeke, BE;
Sylvie Boonen, Laarne, BE;
Paul Colson, Lotenhulle-Aalter, BE;
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
Semiconductor device has a substrate (), a buried layer (), an active area extending from a surface contact to the buried layer, an insulator () in a first trench extending towards the buried layer, to isolate the active area, and a second insulator () in a second deep trench and extending through the buried layer to isolate the buried layer and the active area from other pails of the substrate. This double trench can help reduce the area needed for the electrical isolation between the active device and the other devices. Such reduction in area can enable greater integration or more cells in a multi cell super-MOS device, and so improve performance parameters such as Ron. The double trench can be manufactured using a first mask to etch both trenches at the same time, and subsequently using a second mask to etch the second deep trench deeper.