The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Jul. 02, 2009
Applicant:
Siegfried Mantl, Juelich, DE;
Inventor:
Siegfried Mantl, Juelich, DE;
Assignee:
Forschungszentrum Julich GmbH, Julich, DE;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon on insulator (SOI) substrate is converted into a strained SOI substrate by first providing an SOI substrate having a thin silicon layer and an insulator and at least one first epitaxial relaxing layer on the SOI-substrate. Then a defect region is produced in a layer by implantation of SI ions above the silicon layer of the SOI-substrate. Finally the first layer is relaxed by a thermal treatment in an inert atmosphere to simultaneously strain the silicon layer of the SOI-substrate via dislocation mediated strain transfer and to produce the strained silicon layer directly on the insulator.