The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7915143 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 29, 2011

Filed:

Apr. 30, 2009
Applicants:

Joshua D. Caldwell, Accokeek, MD (US);

Robert E Stahlbush, Silver Spring, MD (US);

Karl D Hobart, Upper Marlboro, MD (US);

Marko J Tadjer, Greenbelt, MD (US);

Orest J Glembocki, Alexandria, VA (US);

Inventors:

Joshua D. Caldwell, Accokeek, MD (US);

Robert E Stahlbush, Silver Spring, MD (US);

Karl D Hobart, Upper Marlboro, MD (US);

Marko J Tadjer, Greenbelt, MD (US);

Orest J Glembocki, Alexandria, VA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/326 (2006.01); H01L 21/479 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift.


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