The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Mar. 10, 2009
Hidekazu Sato, Kasugai, JP;
Hidekazu Sato, Kasugai, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor device is provided which comprises: forming a first gate insulating film and a second gate insulating film in an active region of a semiconductor substrate; introducing an impurity of a first conductivity type into a first site where a first body region is to be formed, the first site being disposed under the first gate insulating film in the active region; forming a gate electrode on each of the first gate insulating film and the second gate insulating film; and introducing an impurity of the first conductivity type into the first site and a second site where a second body region is to be formed, the second site being disposed under the second gate insulating film in the active region, to form the first body region and the second body region, respectively.