Methods of fabricating thin film transistor and organic light emitting display device using the same

Abstract

Methods of fabricating a TFT and an OLED using the same are provided. The method of fabricating a CMOS TFT includes: preparing a substrate having first and second TFT regions; forming a gate electrode on the substrate; forming a gate insulating layer on the entire surface of the substrate including the gate electrode; forming a semiconductor layer on a predetermined region of the gate insulating layer using a mask; exposing the back of the mask using the gate electrode; injecting n-type impurity ions into the semiconductor layers of the first and second TFT regions using the back-exposed mask and forming a channel region and source and drain regions; ashing both sides of the back-exposed mask; injecting low concentration impurity ions into the semiconductor layers of the first and second TFT regions using the ashed mask and forming an LDD region; and injecting p-type impurity ions into the semiconductor layer of the second TFT region and forming source and drain regions.