The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2011

Filed:

Apr. 25, 2007
Applicant:

Soo-wan Yoon, Suwon-si, KR;

Inventor:

Soo-Wan Yoon, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01); H01L 29/08 (2006.01); H01L 29/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a thin film transistor ('TFT') array panel includes forming a first conductive layer, gate insulating layer, and first insulating layer on a substrate, patterning the first insulating layer to form a first insulating pattern including an opening, etching the gate insulating layer and first conductive layer to form a gate insulating member and a gate line, forming an organic semiconductor in the opening, forming a passivation layer and a second insulating pattern thereon, patterning the second insulating layer to form a second insulating pattern, etching the passivation layer, depositing a second conductive layer thereon, forming a pixel electrode by removing the second insulating pattern and the second conductive layer deposited on the second insulating pattern, and forming a drain electrode and a data line by depositing and patterning a third conductive layer on the resultant structure.


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