The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Apr. 01, 2010
Ikuko Inoue, Yokohama, JP;
Ikuko Inoue, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An n/p semiconductor substrate is formed in such a manner that an n type semiconductor layer is deposited on a psemiconductor substrate. An imaging area including a plurality of n type semiconductor regions making photoelectric conversion and a plurality of p type semiconductor region for isolation formed around the n type semiconductor regions, is formed in the n/p semiconductor substrate. The n type semiconductor layer is divided into an upper layer and a lower layer. A second n type semiconductor region is formed to connect to the ptype semiconductor substrate from a surface of the n/p semiconductor substrate in a peripheral region of the imaging area.