The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Jan. 09, 2009
Giovanni Galli, Saonara, IT;
Giovanni Galli, Saonara, IT;
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A temperature sensor circuit in accordance with an embodiment of the present invention includes a temperature sensing element operable to provide a temperature voltage that is linearly related to the absolute temperature of the circuit. The temperature sensing element includes a first bi-polar junction transistor and a second bipolar junction transistor connected between a supply voltage and a common ground, wherein the base of first bipolar junction transistor is connected to the base of the second bipolar junction transistor, a first resistor connected between an emitter of the first bipolar junction transistor and the common ground and a second resistor connected between the common ground and a first node, wherein the temperature voltage is provided to the first node across the second resistor. The temperature sensor circuit also includes a current supply element operable to supply a common current to a collector of the first bipolar junction transistor, the second bipolar junction transistor and to the second resistor, respectively, an early voltage element operable to compensate for variations in voltage, a base current element operable to provide a steady base current to the bases of the first and second bipolar junction transistors, a channel modulation element operable to compensate for channel modulation and a leakage element operable to compensate for epi-substrate leakage between the circuit and a substrate on which it is formed.