Memory cell programming method and semiconductor device for simultaneously programming a plurality of memory block groups

Abstract

Provided are a memory cell programming method and a semiconductor device which may be capable of simultaneously writing a bit of data and then another bit of the data to a plurality of memory blocks. The memory programming method, in which M bits of data are written to a plurality of memory blocks, may include a data division operation and a data writing operation where M may be a natural number. In the data division operation, the plurality of memory blocks may be divided into a plurality of memory block groups. In the data writing operation, an ibit of the data may be simultaneously written to two or more memory block groups from among the plurality memory block groups, and then an i+1bit of the data may be simultaneously written to the two or more memory block groups from among the plurality memory block groups, where i is a natural number less than M.