Multilayer chip varistor and electronic component

Abstract

A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal faceand an outermost internal electrode layerA is smaller than a thickness between an internal electrode layerand the outermost internal electrode layerA, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LEis efficiently transferred to the outermost internal electrode layerA having a high thermal conductivity. Furthermore, in the multilayer chip varistor Vof an electronic component EC, the outermost internal electrode layerA has a first internal electrodeelectrically connected to a first connection electrodeand a first terminal electrodethrough first through-hole conductors, and a second internal electrodeelectrically connected to a second connection electrodeand a second terminal electrodethrough second through-hole conductors. Because of this configuration, heat H generated from the semiconductor light emitting device LEis transferred to both the first internal electrodeand the second internal electrode, so as to be transferred to the first through-hole conductorsand the second through-hole conductors. This leads to well-balanced transfer of heat to the first through-hole conductorsand the second through-hole conductors