The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Feb. 01, 2010
Il-jong Song, Suwon-si, KR;
Dong-ha Shim, Seoul, KR;
Hyung-jae Shin, Seongnam-si, KR;
Soon-cheol Kweon, Seoul, KR;
Che-heung Kim, Yongin-si, KR;
Sang-hun Lee, Seoul, KR;
Young-tack Hong, Suwon-si, KR;
Il-jong Song, Suwon-si, KR;
Dong-ha Shim, Seoul, KR;
Hyung-jae Shin, Seongnam-si, KR;
Soon-cheol Kweon, Seoul, KR;
Che-heung Kim, Yongin-si, KR;
Sang-hun Lee, Seoul, KR;
Young-tack Hong, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.