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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7911015 B1

PDFFull Text
Date of Patent:
Mar. 22, 2011

Filed:

Apr. 03, 2009

Infrared detector and infrared solid-state imaging device

Applicant:

Takaki Sugino, Tokyo, JP;

Inventor:

Takaki Sugino, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 31/00 (2006.01); H01L 31/0232 (2006.01); H01L 31/06 (2006.01); H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01); H01L 29/417 (2006.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 25/00 (2006.01); G01J 5/00 (2006.01); G01J 5/20 (2006.01); G01J 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

An infrared detector includes a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type first region and an N-type second region, wherein the first PN junction diode is composed of the P-type first region and an N-type first region formed in the P-type first region at a position separated from the N-type second region, and the second PN junction diode is composed of the N-type second region and a P-type second region formed in the N-type second region at a position separated from the P-type first region, and wherein the first PN junction diode and the second PN junction diode are connected by a metal film formed on a surface of a concave portion spreading both of the P-type first region and the N-type second region.

Find Patent Forward Citations

Sugino, Takaki. (2011). Infrared detector and infrared solid-state imaging device (U.S. Patent No. 7911015). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7911015

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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