The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Sep. 05, 2006
Sang-min Shin, Seoul, KR;
Young-soo Park, Suwon-si, KR;
June-mo Koo, Seoul, KR;
Byoung-jae Bae, Hwaseong-si, KR;
I-hun Song, Seongnam-si, KR;
Suk-pil Kim, Yongin-si, KR;
Sang-min Shin, Seoul, KR;
Young-soo Park, Suwon-si, KR;
June-mo Koo, Seoul, KR;
Byoung-jae Bae, Hwaseong-si, KR;
I-hun Song, Seongnam-si, KR;
Suk-pil Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiOor may have a perovskite crystal structure excluding Pb.