The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jul. 17, 2007
Akira Endoh, Kawasaki, JP;
Yoshimi Yamashita, Kawasaki, JP;
Akira Endoh, Kawasaki, JP;
Yoshimi Yamashita, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A channel layer () made of compound semiconductor and a barrier layer () made of compound semiconductor having a band gap wider than the channel layer are formed over a substrate. A gate insulating film () made of first insulating material is formed on the barrier layer over the channel region. A gate electrode () is formed on a partial area of the gate insulating film. A protective film is disposed on the gate insulating film on both sides of the gate electrode. The protective film comprises a lower protective film () made of second insulating material whose etching resistance is different from the first insulating material and an upper protective film () made of third insulating film whose etching resistance is different from the second insulating material. A source electrode and a drain electrode are electrically connected to the channel layer on both sides of the gate electrode.