The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2011

Filed:

Mar. 28, 2008
Applicants:

Shih-peng Chen, Taoyuan Hsien, TW;

Ching-chuan Shiue, Taoyuan Hsien, TW;

Chao-min Chen, Taoyuan Hsien, TW;

Horng-jou Wang, Taoyuan Hsien, TW;

Huang-kun Chen, Taoyuan Hsien, TW;

Inventors:

Shih-Peng Chen, Taoyuan Hsien, TW;

Ching-Chuan Shiue, Taoyuan Hsien, TW;

Chao-Min Chen, Taoyuan Hsien, TW;

Horng-Jou Wang, Taoyuan Hsien, TW;

Huang-Kun Chen, Taoyuan Hsien, TW;

Assignee:

Delta Electronics, Inc., Taoyuan Hsien, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
Abstract

A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.


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