The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Feb. 01, 2006
Peng Chen, Singapore, SG;
Soo Jin Chua, Singapore, SG;
Zhonglin Miao, Singapore, SG;
Sudhiranjan Tripathy, Singapore, SG;
Peng Chen, Singapore, SG;
Soo Jin Chua, Singapore, SG;
Zhonglin Miao, Singapore, SG;
Sudhiranjan Tripathy, Singapore, SG;
Agency for Science, Technology and Research, Singapore, SG;
Abstract
A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.