The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jun. 02, 2008
Tobin J. Marks, Evanston, IL (US);
David B. Janes, West Lafayette, IN (US);
Sanghyun Ju, Seoul, KR;
Peide YE, West Lafayette, IN (US);
Chongwu Zhou, Arcadia, CA (US);
Antonio Facchetti, Chicago, IL (US);
Tobin J. Marks, Evanston, IL (US);
David B. Janes, West Lafayette, IN (US);
Sanghyun Ju, Seoul, KR;
Peide Ye, West Lafayette, IN (US);
Chongwu Zhou, Arcadia, CA (US);
Antonio Facchetti, Chicago, IL (US);
Northwestern University, Evanston, IL (US);
Purdue Research Foundation, West Lafayette, IN (US);
University of Southern California, Los Angeles, CA (US);
Abstract
Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.