The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Dec. 20, 2007
Tetsuya Hayashi, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Tetsuya Hayashi, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Nissan Motor Co., Ltd., Yokohama-shi, Kanagawa, JP;
Abstract
A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device comprises hetero semiconductor regions formed of polycrystalline silicon having a band gap width different from that of a drift region and hetero-adjoined with the drift region, a gate insulation film, a gate electrode adjoined to the gate insulation film, a source electrode connected to a source contact portion of the hetero semiconductor regions and an outermost switch structure and a repeating portion switch structure with a drain electrode connected to a substrate region. In a conduction state, the outermost switch structure comprises a mechanism in which the current flowing at the outermost switch structure becomes smaller than the current flowing at the repeating portion switch structure.