The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jun. 08, 2009
Koichiro Niira, Higashiomi, JP;
Hirofumi Senta, Higashiomi, JP;
Hideki Hakuma, Higashiomi, JP;
Kyocera Corporation, Kyoto, JP;
Abstract
In a photoelectric conversion device, in a contact between a p-type semiconductorand an electrode, an n-type semiconductorof a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductorand the electrode. The existence of the n-type semiconductorallows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductorand the n-type semiconductorin a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.