The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Nov. 24, 2008
Applicants:
Jonathan Zanhung Sun, Shrub Oak, NY (US);
Simone Raoux, Santa Clara, CA (US);
Hemantha Wickramasinghe, San Jose, CA (US);
Inventors:
Jonathan Zanhung Sun, Shrub Oak, NY (US);
Simone Raoux, Santa Clara, CA (US);
Hemantha Wickramasinghe, San Jose, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.