The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jul. 30, 2007
Christopher S. Olsen, Fremont, CA (US);
Tejal Goyani, Sunnyvale, CA (US);
Johanes Swenberg, Los Gates, CA (US);
Christopher S. Olsen, Fremont, CA (US);
Tejal Goyani, Sunnyvale, CA (US);
Johanes Swenberg, Los Gates, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of forming dielectric layers on a substrate comprising silicon and oxygen are disclosed herein. In some embodiments, a method of forming a dielectric layer on a substrate includes provide a substrate having an exposed silicon oxide layer; treating an upper surface of the silicon oxide layer with a plasma; and depositing a silicon nitride layer on the treated silicon oxide layer via atomic layer deposition. The silicon nitride layer may be exposed to a plasma nitridation process. The silicon oxide and silicon nitride layers may be subsequently thermally annealed. The dielectric layers may be used as part of a gate structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile