The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Dec. 10, 2007
Hong-gu Yi, Kyoungki-do, KR;
Hong-Gu Yi, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for forming a contact hole in a semiconductor device includes forming an insulation layer over a substrate, forming a hard mask pattern over the insulation layer, forming a first contact hole by partially etching the insulation layer, forming a spacer on sidewalls of the first contact hole, forming a second contact hole to expose the substrate by etching the remaining insulation layer within the first contact hole, forming a third contact hole by horizontally etching the second contact hole, wherein a line width of the third contact hole is wider than that of the first contact hole, and removing the hard mask pattern and the spacer.