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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7910477 B1

PDFFull Text
Date of Patent:
Mar. 22, 2011

Filed:

Dec. 28, 2007

Etch residue reduction by ash methodology

Applicants:

Jeannette Michelle Jacques, Rowlett, TX (US);

Deepak A. Ramappa, Dallas, TX (US);

Inventors:

Jeannette Michelle Jacques, Rowlett, TX (US);

Deepak A. Ramappa, Dallas, TX (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Warren L. Franz

Wade J. Brady, III

Frederick J. Telecky, Jr.

Primary Examiner:

Charles D Garber

Assistant Examiner:

Pape Sene

Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for forming dual damascene interconnect structures are provided. The methods incorporate an ashing operation comprising a first ash operation and a second overash operation. The ashing operation is performed prior to etching of an etch stop layer. The operation removes residue from a cavity formed during formation of the interconnect structure and facilitates better CD control without altering the cavity profiles.

Find Patent Forward Citations

Jacques, Jeannette. (2011). Etch residue reduction by ash methodology (U.S. Patent No. 7910477). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7910477

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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